A novel high-Q and wide-frequency-range inductor using Si 3-D MMIC technology

Author

Kamogawa, Kenji ; Nishikawa, Kenjiro ; Toyoda, Ichihiko ; Tokumitsu, Tsuneo ; Tanaka, Masayoshi

Author_Institution

NTT Wireless Syst. Lab., Kanagawa, Japan

Volume

9

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

16

Lastpage

18

Abstract

A novel high-Q and wide-frequency-range inductor formed using three-dimensional (3-D) monolithic microwave integrated circuit (MMIC) technology on a conductive Si substrate is presented. A fabricated 1.24-nH spiral inductor achieves the very high resonant frequency of 29.3 GHz and maximum quality factor (Q) of 45.77 owing to thick dielectric layers and a ground plane that overlays the substrate. The measured results show that the Si 3-D MMIC is very suitable for realizing single-chip and mixed-mode transceivers for L-band to Ku-band applications

Keywords

MMIC; Q-factor; elemental semiconductors; inductors; silicon; 29.3 GHz; 3D MMIC technology; Ku-band; L-band; Si; conductive Si substrate; dielectric layer; ground plane; mixed-mode transceiver; quality factor; resonant frequency; single-chip transceiver; spiral inductor; three-dimensional monolithic microwave integrated circuit; Dielectric substrates; Inductors; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Q factor; Resonant frequency; Spirals;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.752110

Filename

752110