Common and differential crosstalk characterization on the silicon substrate

Author

Eisenstadr, W.R. ; Bockelman, D.E.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

9

Issue

1

fYear

1999

Firstpage

25

Lastpage

27

Abstract

Integrated circuit pad-to-pad crosstalk characterization structures were fabricated and measured over a 8000 μm×2500 μm area using Al pads on a silicon substrate. The structures were tested by a pure-mode network analyzer to yield common- and differential-mode crosstalk at 1 and 2 GHz. Differential-mode signals introduce far less substrate noise. This novel technique can characterize substrate noise levels near sensitive radio frequency (RF) and microwave circuits.

Keywords

crosstalk; elemental semiconductors; integrated circuit noise; microwave integrated circuits; network analysers; silicon; substrates; 1 to 2 GHz; Al; Al bond pad; RF circuit; Si; common-mode signal; crosstalk; differential-mode signal; integrated circuit; microwave circuit; noise; pure-mode vector network analyzer; silicon substrate; Area measurement; Circuit testing; Crosstalk; Integrated circuit measurements; Integrated circuit noise; Integrated circuit yield; Microwave theory and techniques; Noise level; Radio frequency; Silicon;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.752113

Filename

752113