Title :
An active integrated 24-GHz antenna using a flip-chip mounted HEMT
Author :
Kaleja, Martin M. ; Heide, Patric ; Biebl, Erwin M.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
fDate :
1/1/1999 12:00:00 AM
Abstract :
In this paper an active integrated microstrip antenna at 24 GHz employing a three-terminal active device is presented. A high electron mobility transistor (HEMT) is integrated in a purely uniplanar microstrip structure by means of flip-chip technology, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. A radiated output power of 10 mW and a dc-to-RF efficiency of 20% are obtained. The deviations of the frequencies of operation from the predicted values are below ±0.5%
Keywords :
active antennas; flip-chip devices; high electron mobility transistors; microstrip antennas; 10 mW; 20 percent; 24 GHz; active integrated microstrip antenna; flip-chip technology; high electron mobility transistor; three-terminal device; Antenna theory; Frequency; HEMTs; Integrated circuit technology; MODFETs; Microstrip antennas; Scattering parameters; Slot antennas; Transmission line matrix methods; Wireless sensor networks;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
