An active integrated 24-GHz antenna using a flip-chip mounted HEMT

Author

Kaleja, Martin M. ; Heide, Patric ; Biebl, Erwin M.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany

Volume

9

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

34

Lastpage

36

Abstract

In this paper an active integrated microstrip antenna at 24 GHz employing a three-terminal active device is presented. A high electron mobility transistor (HEMT) is integrated in a purely uniplanar microstrip structure by means of flip-chip technology, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. A radiated output power of 10 mW and a dc-to-RF efficiency of 20% are obtained. The deviations of the frequencies of operation from the predicted values are below ±0.5%

Keywords

active antennas; flip-chip devices; high electron mobility transistors; microstrip antennas; 10 mW; 20 percent; 24 GHz; active integrated microstrip antenna; flip-chip technology; high electron mobility transistor; three-terminal device; Antenna theory; Frequency; HEMTs; Integrated circuit technology; MODFETs; Microstrip antennas; Scattering parameters; Slot antennas; Transmission line matrix methods; Wireless sensor networks;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.752116

Filename

752116