DocumentCode :
1484771
Title :
Dissipative Gap Material in Tape Heads
Author :
Soda, Yutaka ; Sekine, Masaaki
Volume :
16
Issue :
4
fYear :
2010
Firstpage :
48
Lastpage :
54
Abstract :
A giant magnetoresistive (GMR) head in tape-recording systems is affected by the electrostatic discharge (ESD) between the sensor and magnetic shields. Hence, Pt-doped Al2O3 was developed as a dissipative gap material to reduce the ESD current. Pt chips were sputtered on an alumina target to vary the film resistance. The decay time of a charged plate on Pt-doped Al2O3 was measured for various film thicknesses. The I-V characteristics indicated that, as the applied voltage increased, the Pt-doped Al2O3 film increased the current gradually, whereas the Al2O3 film increased the current rapidly over the breakdown voltage.
Keywords :
alumina; doping profiles; electrostatic discharge; giant magnetoresistance; magnetic heads; magnetic tape equipment; platinum; sputter deposition; Al2O3 film; Al2O3:Pt; I-V characteristics; Pt chip sputtering; Pt-doped Al2O3; alumina target; breakdown voltage; charged plate decay time; dissipative gap material; electrostatic discharge current; film resistance variation; giant magnetoresistive head; magnetic shields; sensor; tape heads; tape-recording systems;
fLanguage :
English
Journal_Title :
Industry Applications Magazine, IEEE
Publisher :
ieee
ISSN :
1077-2618
Type :
jour
DOI :
10.1109/MIAS.2010.936974
Filename :
5458381
Link To Document :
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