A simple MOSFET model for circuit analysis

Author

Sakurai, Takayasu ; Newton, A. Richard

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

38

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

887

Lastpage

894

Abstract

A simple, general, yet realistic MOSFET model, the nth power law MOSFET model, is introduced. The model can express I- V characteristics of short-channel MOSFETs at least down to 0.25-μm channel length and of resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, unlike the fitting procedure with expensive numerical iterations used for the conventional models. The model also permits analytical treatment of circuits in the short-channel region and plays the role of a bridge between complicated MOSFET current characteristics and circuit behavior in the deep-submicrometer region

Keywords

circuit analysis computing; insulated gate field effect transistors; semiconductor device models; 0.25 micron; I-V characteristics; MOSFET model; circuit analysis; deep-submicrometer region; model parameter extraction; nth power law model; resistance inserted MOSFETs; short-channel MOSFETs; short-channel region; single variable equations; Analytical models; Bridge circuits; Circuit analysis; Circuit simulation; Differential equations; MOSFET circuits; Parameter extraction; Power MOSFET; SPICE; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75219

Filename

75219