DocumentCode
1485179
Title
Attractive magnetic memories
Author
Katti, Romney R. ; Zhu, Theodore
Volume
17
Issue
2
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
26
Lastpage
34
Abstract
Giant magneto-resistive random-access memories (GMRAMs) are magnetic nonvolatile random-access memories that use magnetic storage in magnetic multilayers to store data and the giant magneto-resistance (GMR) effect to read stored data. Pseudo-spin-valve (PSV) and spin-valve (SV) devices are patterned magnetic multilayers that exhibit the GMR effect in current-in-plane (CIP) structures. This article will focus on the operating principles of PSV and SV devices as CIP GMRAM elements
Keywords
giant magnetoresistance; magnetic multilayers; magnetic storage; magnetoresistive devices; random-access storage; spin valves; current-in-plane structure; giant magnetoresistive random access memory; magnetic multilayer; nonvolatile memory; pseudo-spin-valve device; spin-valve device; Iron; Magnetic devices; Magnetic memory; Magnetic multilayers; Magnetic properties; Magnetic semiconductors; Magnetization; Nonvolatile memory; Random access memory; Read-write memory;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.920876
Filename
920876
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