Title :
A resistive-gate Al0.3Ga0.7As/GaAs 2DEG CCD with high charge-transfer efficiency at 1 GHz
Author :
Song, J.-I. ; Rossi, D.V. ; Xin, S. ; Wang, W.I. ; Fossum, E.R.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
The fabrication and performance of an Al0.3Ga0.7 As/GaAs modulation-doped resistive-gate charge-coupled device (CCD) are reported. The two-dimensional electron gas (2DEG) CCD, implemented as a 32-stage four-phase delay line, was tested at both low (1-13-MHz) and high (0.6-1.0-GHz) frequency. It exhibits a room-temperature charge-transfer efficiency (CTE) of better than 0.999 at clock frequencies from 10 MHz up to 1 GHz without a fat-zero signal and is limited by dark current below 10 MHz. The high-frequency test showed no CTE degradation up to 1-GHz operation. The CTE degraded at frequencies lower than approximately 5 MHz due to dark current. The charge-handling capability and minimum clock swing of the resistive-gate 2DEG CCD are calculated
Keywords :
III-V semiconductors; aluminium compounds; charge-coupled device circuits; charge-coupled devices; delay lines; electron gas; gallium arsenide; 0.6 to 1 GHz; 1 to 13 MHz; 2DEG CCD; 99.9 percent; Al0.3Ga0.7As-GaAs; charge-coupled device; charge-handling capability; dark current; fabrication; four-phase delay line; high charge-transfer efficiency; minimum clock swing; modulation-doped; resistive-gate; two-dimensional electron gas; Charge coupled devices; Clocks; Dark current; Degradation; Electrons; Epitaxial layers; Fabrication; Frequency; Gallium arsenide; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
