Performance potential of low-voltage power MOSFETs in liquid-nitrogen-cooled power systems

Author

Shenai, Krishna

Author_Institution

General Electric Co., Schenectady, NY, USA

Volume

38

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

934

Lastpage

936

Abstract

The performance potential of a power MOSFET in cryogenic power electronic systems is discussed. Based on a simple analysis and the measured performance of scaled silicided 30-V power MOSFETs, it is shown that an order of magnitude improvement in on-state resistance can be achieved by cooling to liquid-nitrogen temperature. This performance improvement results in an order of magnitude improvement in optimum power conversion frequency for a given die size, a factor of 2 reduction in die size at a given conversion frequency, and a factor of 3 reduction in total power loss for switched-mode power converters operated at 77 K

Keywords

cryogenics; insulated gate field effect transistors; power electronics; power transistors; semiconductor device models; 30 V; 77 K; DMOSFET; LV scaled silicided devices; cooling; cryogenic power electronic systems; liquid-nitrogen temperature; low-voltage; on-state resistance; optimum power conversion frequency; power MOSFET; switched-mode power converters; total power loss; Cryogenics; Electrical resistance measurement; Electronics cooling; Frequency conversion; MOSFETs; Performance analysis; Performance loss; Power electronics; Power measurement; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.75228

Filename

75228