DocumentCode :
1485466
Title :
Temperature-Dependent Study on Modal Gain and Differential Gain of 1.3- 
m InAs–GaAs QD Lasers With Different  lasers with different doping concentrations have been investigated as a function of injection current under different operation temperatures from 20°C to 120°C. The results show that QD laser with light doping density can improve the characteristic temperature (T<sub>o</sub>), modal gain, and differential gain and reduce the threshold current density.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; current density; doping profiles; gallium arsenide; indium compounds; quantum dot lasers; semiconductor doping; InAs-GaAs; differential gain; doping concentrations; injection current; light doping density; modal gain; p-doping levels; quantum dot lasers; temperature 20 degC to 120 degC; threshold current density; wavelength 1.3 mum; <formula formulatype=)
$p$ -doping; Characteristic temperature $(T_{0})$
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2049485
Filename :
5460920
Link To Document :
