DocumentCode
1485466
Title
Temperature-Dependent Study on Modal Gain and Differential Gain of 1.3- 
m InAs–GaAs QD Lasers With Different  lasers with different doping concentrations have been investigated as a function of injection current under different operation temperatures from 20°C to 120°C. The results show that QD laser with light doping density can improve the characteristic temperature (T<sub>o</sub>), modal gain, and differential gain and reduce the threshold current density.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; current density; doping profiles; gallium arsenide; indium compounds; quantum dot lasers; semiconductor doping; InAs-GaAs; differential gain; doping concentrations; injection current; light doping density; modal gain; p-doping levels; quantum dot lasers; temperature 20 degC to 120 degC; threshold current density; wavelength 1.3 mum; <formula formulatype=)
$p$ -doping; Characteristic temperature $(T_{0})$
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2049485
Filename
5460920
Link To Document