Title :
Fabrication of a 1.55-μm VCSEL and an InGaAsP-InP HBT from a common epitaxial structure
Author :
Eriksson, U. ; Evaldsson, P. ; Streubel, K.
Author_Institution :
Lab. of Photonics, R. Inst. of Technol., Stockholm, Sweden
fDate :
4/1/1999 12:00:00 AM
Abstract :
A common epitaxial structure is used for the fabrication of a 1.55-μm vertical-cavity surface-emitting laser and an InGaAsP-InP heterojunction bipolar transistor (HBT). By selectively applying zinc diffusion directly after growth, the doping type of the HBT cap and emitter is reversed, providing the epitaxial material used for the laser. This enables a similar process to be used for the two devices. Fabricated HBTs show a current gain of 400 at a collector current of 20 mA. Lasers are electrically pumped and operate continuous wave up to -70/spl deg/C.
Keywords :
III-V semiconductors; bipolar integrated circuits; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser cavity resonators; laser transitions; optical fabrication; quantum well lasers; surface emitting lasers; -70 C; 1.55 mum; 20 mA; CW lasers; HBT cap; InGaAsP-InP; InGaAsP-InP HBT; InGaAsP-InP heterojunction bipolar transistor; VCSEL; collector current; common epitaxial structure; continuous wave lasers; current gain; electrically pumped; epitaxial material; monolithic integration; vertical-cavity surface-emitting laser; zinc diffusion; Heterojunction bipolar transistors; Indium phosphide; Laser modes; Optical device fabrication; Optical materials; Optical surface waves; Pump lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Zinc;
Journal_Title :
Photonics Technology Letters, IEEE
