• DocumentCode
    1485549
  • Title

    Total internal reflection switching in electrooptically addressable domain-engineered LiNbO3

  • Author

    Boyland, A.J. ; Ross, G.W. ; Mailis, S. ; Smith, P.G.R. ; Eason, R.W.

  • Author_Institution
    Optoelectron. Res. Centre, Southampton Univ., UK
  • Volume
    37
  • Issue
    9
  • fYear
    2001
  • fDate
    4/26/2001 12:00:00 AM
  • Firstpage
    585
  • Lastpage
    587
  • Abstract
    The authors demonstrate a novel electro-optically addressable switch that uses electric-field controllable total internal reflection at an interface between two anti-parallel domains fabricated in single crystal LiNbO3. With an applied field, the induced index change at the interface is sufficient to switch the beam from transmission to reflection with a contrast ratio exceeding 20 dB in current samples
  • Keywords
    electric domains; electro-optical switches; light reflection; lithium compounds; photorefractive materials; refractive index; LiNbO3; anti-parallel domain interfaces; applied field; contrast ratio; domain-engineered; electric-field controllable total internal reflection; electro-optically addressable switch; electrooptically addressable; induced index change; optical switches; reflection beam; single crystal LiNbO3; total internal reflection switching; transmission beam;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.20010404
  • Filename
    920930