DocumentCode
1485549
Title
Total internal reflection switching in electrooptically addressable domain-engineered LiNbO3
Author
Boyland, A.J. ; Ross, G.W. ; Mailis, S. ; Smith, P.G.R. ; Eason, R.W.
Author_Institution
Optoelectron. Res. Centre, Southampton Univ., UK
Volume
37
Issue
9
fYear
2001
fDate
4/26/2001 12:00:00 AM
Firstpage
585
Lastpage
587
Abstract
The authors demonstrate a novel electro-optically addressable switch that uses electric-field controllable total internal reflection at an interface between two anti-parallel domains fabricated in single crystal LiNbO3. With an applied field, the induced index change at the interface is sufficient to switch the beam from transmission to reflection with a contrast ratio exceeding 20 dB in current samples
Keywords
electric domains; electro-optical switches; light reflection; lithium compounds; photorefractive materials; refractive index; LiNbO3; anti-parallel domain interfaces; applied field; contrast ratio; domain-engineered; electric-field controllable total internal reflection; electro-optically addressable switch; electrooptically addressable; induced index change; optical switches; reflection beam; single crystal LiNbO3; total internal reflection switching; transmission beam;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.20010404
Filename
920930
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