Title :
Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers
Author :
Higashi, T. ; Sweeney, S.J. ; Phillips, A.F. ; Adams, A.R. ; O´Reilly, E.P. ; Uchida, T. ; Fujii, T.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fDate :
4/1/1999 12:00:00 AM
Abstract :
We investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInAs-InP strained multiple-quantum-well lasers. We find that radiative recombination constitutes almost 100% of the threshold current up to 220 K and remains more than 70% even at 300 K. This results in a high characteristic temperature T0.
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; 1.3-/spl mu/m AlGaInAs-InP strained MQW lasers; 220 K; 300 K; AlGaInAs-InP; AlGaInAs-InP strained multiple-quantum-well lasers; high characteristic temperature; radiative recombination; reduced nonradiative current; temperature dependence; threshold current; Current density; Laser modes; Laser theory; Leakage current; Quantum well devices; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature dependence; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
