• DocumentCode
    1485598
  • Title

    C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density

  • Author

    Lay, T.S. ; Liu, W.D. ; Hong, M. ; Kwo, J. ; Mannaerts, J.P.

  • Author_Institution
    Inst. of Electro.-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    37
  • Issue
    9
  • fYear
    2001
  • fDate
    4/26/2001 12:00:00 AM
  • Firstpage
    595
  • Lastpage
    597
  • Abstract
    An MOS capacitor formed by electron-beam deposition of Ga2 O3(Gd2O3) on GaN has been characterised by C-V and G-V measurements at high AC frequencies of 1000, 100 and 10 KHz. An accurate C-V relation has been obtained consistently by using a model that includes both series and shunt parasitic resistances. The results indicate a fixed oxide charge density of ~3.0×1011 cm-2. and a minimum interface state density of ~4.2×1011 cm-2 at the Ga 2O3(Gd2O3)/GaN interface
  • Keywords
    III-V semiconductors; MOS capacitors; capacitance; electron beam deposition; gadolinium; gallium compounds; interface states; wide band gap semiconductors; 10 to 1000 kHz; C-V characterisation; G-V characterisation; Ga2O3(Gd2O3)/GaN capacitor; Ga2O3:Gd-GaN; GaN; MOS capacitor; electron-beam deposition; fixed oxide charge density; high AC frequencies; low interface state density; minimum interface state density; model; series resistance; shunt parasitic resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010403
  • Filename
    920937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1485598