Title :
High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing
Author :
Zhou, Quan ; Guo, Shuxu ; Du, Guotong ; Wang, Yuqi ; Chang, Yuchun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
fDate :
5/1/2012 12:00:00 AM
Abstract :
In this paper, we demonstrate a novel photodetecting scheme featuring intrinsic high dynamic range (DR) and large output voltage swing. Employing an optimized punchthrough enhanced phototransistor (PEPT), a large output swing of over 1 V and a high DR of more than 140 dB are achieved without any auxiliary amplifier. Fabricated with 0.5-μm low-cost standard CMOS process, the operating voltage of the photodetecting system can be as low as 1.8 V. Comprehensive theoretical analyses on PEPT are presented as well as corresponding measurement results.
Keywords :
CMOS analogue integrated circuits; amplifiers; photodetectors; phototransistors; PEPT; auxiliary amplifier; high-dynamic-range photodetecting scheme; intrinsic high dynamic range; low-cost standard CMOS process; optimized PEPT; optimized punchthrough enhanced phototransistor; size 0.5 mum; Dark current; Niobium; Optical saturation; Optical sensors; Photoconductivity; Transistors; Voltage measurement; High dynamic range (DR) (HDR); large output swing; phototransistor (PT); punchthrough; standard CMOS process;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2187658
