High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

Author

Zhou, Quan ; Guo, Shuxu ; Du, Guotong ; Wang, Yuqi ; Chang, Yuchun

Author_Institution

State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1423

Lastpage

1429

Abstract

In this paper, we demonstrate a novel photodetecting scheme featuring intrinsic high dynamic range (DR) and large output voltage swing. Employing an optimized punchthrough enhanced phototransistor (PEPT), a large output swing of over 1 V and a high DR of more than 140 dB are achieved without any auxiliary amplifier. Fabricated with 0.5-μm low-cost standard CMOS process, the operating voltage of the photodetecting system can be as low as 1.8 V. Comprehensive theoretical analyses on PEPT are presented as well as corresponding measurement results.

Keywords

CMOS analogue integrated circuits; amplifiers; photodetectors; phototransistors; PEPT; auxiliary amplifier; high-dynamic-range photodetecting scheme; intrinsic high dynamic range; low-cost standard CMOS process; optimized PEPT; optimized punchthrough enhanced phototransistor; size 0.5 mum; Dark current; Niobium; Optical saturation; Optical sensors; Photoconductivity; Transistors; Voltage measurement; High dynamic range (DR) (HDR); large output swing; phototransistor (PT); punchthrough; standard CMOS process;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2187658

Filename

6178783