• DocumentCode
    1485791
  • Title

    Enhanced prediction of GaN MISHEMT RF power performance using improved large-signal model

  • Author

    Liu, Leslie S.

  • Author_Institution
    Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • Volume
    47
  • Issue
    7
  • fYear
    2011
  • Firstpage
    447
  • Lastpage
    448
  • Abstract
    An empirical large-signal model for a high-power AlGaN/GaN metal-insulator-semiconductor HEMT (GaN MISHEMT) utilising improved drain current (I-V) and gate charge (Q-V) formulation is presented. The proposed modelling equations accurately model the asymmetric bell-shaped transconductance (Gm) and gate capacitance (C11) characteristics over a wide bias range of operation. The simulation results of RF large-signal harmonic power levels and two-tone intermodulation distortion products show excellent agreement with the measured data.
  • Keywords
    III-V semiconductors; MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation distortion; wide band gap semiconductors; MISHEMT RF power performance; RF large-signal harmonic power levels; asymmetric bell-shaped transconductance; enhanced prediction; gate capacitance characteristics; large-signal model; two-tone intermodulation distortion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3687
  • Filename
    5741033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1485791