Ta additive effect on RF magnetron sputtered CoCr films

Author

Tamai, Hideki ; Tagami, Katsumichi ; Hayashida, Hiroshi

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

24

Issue

6

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

2347

Lastpage

2349

Abstract

Magnetic properties for sputtered CoCrTa films (18 at.% Cr and 2.0-3.0 at.% Ta), which were deposited under various background pressures P_i, and argon sputtering pressures, P _Ar, have been examined. The perpendicular anisotropy field H_k for CoCrTa films maintains high values of 5-6 kOe in a wide range of P_i and P_Ar, as compared with that for CoCr films. In order to optimize Ta composition, magnetic properties and crystalline microstructures for Ta additive content (0-4.0 at.%) have been investigated. H_k and perpendicular coercivity H_c⊥ increase with increasing Ta concentration above 2.0 at.% Ta. C-axis orientation is improved by adding Ta to CoCr films. However, above 3.0 at.% Ta, H_c⊥ steeply decreases and domain wall motion is observed, owing to the increase in crystalline grain size. The appropriate Ta composition is 2.0-3.0 at.%

Keywords

chromium alloys; cobalt alloys; coercive force; grain size; magnetic anisotropy; magnetic domain walls; magnetic thin films; sputtered coatings; C-axis orientation; argon sputtering pressures; background pressures; crystalline grain size; crystalline microstructures; domain wall motion; magnetic properties; perpendicular anisotropy field; perpendicular coercivity; sputtered CoCrTa films; Additives; Anisotropic magnetoresistance; Argon; Chromium; Crystallization; Grain size; Magnetic films; Magnetic properties; Radio frequency; Sputtering;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92105

Filename

92105