Single-ZnO-Nanowire Memory

Author

Chiang, Yen-De ; Chang, Wen-Yuan ; Ho, Ching-Yuan ; Chen, Cheng-Ying ; Ho, Chih-Hsiang ; Lin, Su-Jien ; Wu, Tai-Bor ; He, Jr-Hau

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

58

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1735

Lastpage

1740

Abstract

Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 10⁵. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

Keywords

II-VI semiconductors; X-ray photoelectron spectra; electron diffraction; nanoelectronics; nanowires; semiconductor quantum wires; semiconductor storage; transmission electron microscopy; vacancies (crystal); wide band gap semiconductors; zinc compounds; X-ray phototelectron spectroscopy; ZnO; high-resolution TEM; nonvolatile memory; resistive switching; rewritable memory; selected-area electron diffraction; single-nanowire memory; transmission electron microscopy; vacancies; Materials; Nanowires; Nonvolatile memory; Optical switches; Resistance; Zinc oxide; Nanowire (NW); ZnO; resistance random access memory (ReRAM); resistive switching; space-charge-limited (SCL) conduction;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2121914

Filename

5741715