Title :
Single-ZnO-Nanowire Memory
Author :
Chiang, Yen-De ; Chang, Wen-Yuan ; Ho, Ching-Yuan ; Chen, Cheng-Ying ; Ho, Chih-Hsiang ; Lin, Su-Jien ; Wu, Tai-Bor ; He, Jr-Hau
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2011 12:00:00 AM
Abstract :
Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; electron diffraction; nanoelectronics; nanowires; semiconductor quantum wires; semiconductor storage; transmission electron microscopy; vacancies (crystal); wide band gap semiconductors; zinc compounds; X-ray phototelectron spectroscopy; ZnO; high-resolution TEM; nonvolatile memory; resistive switching; rewritable memory; selected-area electron diffraction; single-nanowire memory; transmission electron microscopy; vacancies; Materials; Nanowires; Nonvolatile memory; Optical switches; Resistance; Zinc oxide; Nanowire (NW); ZnO; resistance random access memory (ReRAM); resistive switching; space-charge-limited (SCL) conduction;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2121914
