DocumentCode :
1486679
Title :
Development of Quantum Hall Array Resistance Standards at NMIJ
Author :
Oe, Takehiko ; Matsuhiro, Kenjiro ; Itatani, Taro ; Gorwadkar, Sucheta ; Kiryu, Syogo ; Kaneko, Nobu-hisa
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba, Japan
Volume :
60
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
2590
Lastpage :
2595
Abstract :
A quantum Hall array resistance standard (QHARS) device with a nominal value close to 10 kΩ on the i = 2 plateau has been developed on a GaAs/AlGaAs heterosubstrate. This QHARS device consists of 266 Hall bar elements, and its nominal value has only 0.0342 × 10-6 difference based on RK-90 ( = 25 812.807 Ω) from an integer value of 104. As a result of comparison measurements with the conventional Quantized Hall Resistance Standard via the 100- Ω standard resistor, the value of the QHARS device agrees with its nominal value within 3.5 × 10-8.
Keywords :
calibration; electric resistance measurement; quantum Hall effect; Hall bar elements; heterosubstrate; quantum Hall array resistance standards; Arrays; Electrical resistance measurement; Insulation; Resistance; Resistors; Standards; Wiring; 10-$hbox{k}Omega$ QHARS; DC resistance standards; photosensitive polyimide (PI); quantized Hall resistance (QHR); quantum Hall array resistance standard (QHARS); quantum Hall effect (QHE);
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2010.2100630
Filename :
5741726
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1486679
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