Low current magnetic-RAM memory operation with a high sensitive spin valve material

Author

Matsuyama, K. ; Asada, H. ; Ikeda, S. ; Taniguchi, K.

Author_Institution

Dept. of Electron. Dev. Eng., Kyushu Univ., Fukuoka, Japan

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3283

Lastpage

3285

Abstract

Bistable bit state changes of a magnetic RAM memory cell (2×5 μm²) made with a highly sensitive spin valve material were performed with pulsed conductor currents I_W of 5.5 mA/μm for parallel to antiparallel and 3.0 mA/μm for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1~2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0.5 mA due to the MR change of 3%. A threshold of I_W for the state change was decreased 20% by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme

Keywords

giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetic switching; magnetoresistive devices; random-access storage; 0.5 mA; MR change; NiFe-Co-Cu-Co; bistable bit state changes; coincident current selection scheme; evaporated spin valve; highly sensitive spin valve material; magnetic RAM memory cell; output voltage change; parallel to antiparallel switching; pulsed conductor currents; reverse switching; selective write operation; sense current; transverse external field; Antiferromagnetic materials; Conducting materials; Conductors; Magnetic devices; Magnetic field measurement; Magnetic materials; Magnetic switching; Magnetization; Random access memory; Read-write memory; Resists; Spin valves; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617918

Filename

617918