Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices

Author

Oti, John O. ; Russek, Stephen E.

Author_Institution

Div. of Electromagn. Technol., Nat. Inst. of Stand. & Technol., Boulder, CO, USA

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3298

Lastpage

3300

Abstract

The effects of device shape and size on the giant magnetoresistive (MR) response of NiFe_{7.5 nm}/Co_{0.6 nm}/Cu_{3 nm}/Co_{0.6 nm}/NiFe_{7.5 nm}/FeMn spin-valve magnetoresistive random access memory (MRAM) stripes are studied by micromagnetic simulation. Samples having aspect ratios of 10:1, 3:1 and 1.5:1, and line widths varying from 0.5 μm to 1.5 μm are simulated. The effects of the magnetostatic coupling between the magnetic layers and their self-demagnetization are studied

Keywords

Barkhausen effect; demagnetisation; giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetic switching; magnetoresistive devices; random-access storage; simulation; 0.5 to 1.5 mum; Barkhausen noise; NiFe-Co-Cu-Co-NiFe-FeMn; aspect ratios; giant magnetoresistive response; line widths; magnetoresistive behavior; magnetostatic coupling; micromagnetic simulation; self-demagnetization; spin-valve MRAM stripes; sub-micrometer spin-valve MRAM devices; switching; Couplings; Giant magnetoresistance; Magnetic anisotropy; Magnetic films; Magnetic moments; Magnetization; Magnetoresistance; Magnetostatics; Micromagnetics; Perpendicular magnetic anisotropy; Random access memory; Sandwich structures; Shape; Spin valves;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617923

Filename

617923