Title :
Faster and denser spin-tunneling random access memory (STram)
Author :
Wang, Z.G. ; He, L.N. ; Mapps, D.J. ; Nakamura, Y. ; Clegg, W.W. ; Wilton, D.T.
Author_Institution :
Centre for Res. in Inf. Storage Technol., Plymouth Univ., UK
fDate :
9/1/1997 12:00:00 AM
Abstract :
The spin tunneling junctions Co/Al2O3/Ni80Fe20 provide an excellent means of storing a binary datum in the hard component (Co), and sensing its remanent state by switching the soft component (NiFe) in such a way that the magnetic state of the hard component remains unaltered. In this paper, it is clarified by a dynamic model that the switching is caused by the incoherent rotation of the magnetization in the fine thin film pattern and the read access time for a micro-structured spin tunneling with area of 0.256 μm×0.256 μm is 0.9 ns. In addition, a magnetic flux closure design was found to reduce the crosstalk by about a factor of five, compared with a conventional keeper-less design, which will be the most favored approach for achieving 109 bits/cm2 areal density
Keywords :
giant magnetoresistance; magnetic storage; magnetoresistive devices; random-access storage; tunnelling; Co-Al2O3-Ni80Fe20; areal density; crosstalk; dynamic model; magnetic flux closure design; magnetization rotation; remanent state; spin-tunneling random access memory; switching; thin film; Anisotropic magnetoresistance; Cobalt; Crosstalk; Iron; Magnetic anisotropy; Magnetic films; Magnetic flux; Magnetic switching; Magnetic tunneling; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Random access memory; Saturation magnetization; Transistors; Tunneling;
Journal_Title :
Magnetics, IEEE Transactions on
