Title :
GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure
Author :
Futami, Mitsuaki ; Shindo, Takahiko ; Koguchi, Takayuki ; Shinno, Keisuke ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fDate :
6/1/2012 12:00:00 AM
Abstract :
To enhance the internal quantum efficiency of GaInAsP/InP lateral current injection (LCI) lasers, we adopted a structure consisting of five uniformly distributed quantum-wells (QWs). A differential quantum efficiency of 59% and an internal quantum efficiency of 70% were obtained for a cavity length of 750 μm, the latter value is almost twice that of an LCI-Fabry-Pérot laser with a conventional QW structure.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; GaInAsP-InP; internal quantum efficiency; laser cavity; lateral current injection laser; size 750 mum; uniformly distributed quantum well structure; Cavity resonators; Distributed feedback devices; Indium phosphide; Laser feedback; Vertical cavity surface emitting lasers; GaInAsP/InP; lateral current injection; quantum-well laser; semiconductor laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2190053
