Title :
Critical area computation via Voronoi diagrams
Author :
Papadopoulou, Evanthia ; Lee, D.T.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
In this paper, we present a new approach for computing the critical area for shorts in a circuit layout. The critical area calculation is the main computational problem in very large scale integration yield prediction. The method is based on the concept of Voronoi diagrams and computes the critical area for shorts (for all possible defect radii, assuming square defects) accurately in O(n log n) time, where n is the size of the input. The method is presented for rectilinear layouts and layouts containing edges of slope ±1. As a byproduct, we briefly sketch how to speed up the grid method of Wagner and Koren [1995]
Keywords :
VLSI; circuit layout CAD; computational geometry; integrated circuit layout; integrated circuit yield; Voronoi diagrams; circuit layout; critical area computation; defect radii; grid method; rectilinear layouts; shorts; square defects; very large scale integration; yield prediction; Area measurement; Circuit faults; Conducting materials; Density functional theory; Helium; Manufacturing processes; Pollution measurement; Semiconductor device measurement; Very large scale integration; Yield estimation;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on