Optimized preparation conditions of RF co-sputtered TbFeCo magneto-optical storage films

Author

Schone-Warnefeld, A. ; Weller, D. ; Reim, W. ; Rupp, G. ; Marko, W. ; Hülsing, H. ; Schuster, K. ; Vieth, M. ; Weissenberger, V. ; Hillenbrand, B.

Author_Institution

Siemens AG, Erlangen, West Germany

Volume

24

Issue

6

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

2778

Lastpage

2780

Abstract

Amorphous TeFeCo films have been prepared by RF co-sputtering from two composite Tb₂₆Fe₇₄ and Tb₂₆Co₇₄ (area %) targets. Chemical, structural, magnetic and magnetooptical properties of these films have been investigated systematically as functions of argon pressure and applied bias voltage during sputtering. For this particular preparation system, optimum sputtering parameters with respect to a high carrier-to-noise ratio have been found to be a 20-40 V bias at 8×10^-3 mbar argon pressure. Dynamic write-read tests on 5-1/4-in polycarbonate disks give a carrier-to-noise ratio of 55 dB at 6-MHz carrier frequency and 30-kHz bandwidth, at a bit size of 1.4 μm

Keywords

Kerr magneto-optical effect; cobalt alloys; coercive force; ferrimagnetic properties of substances; iron alloys; magnetic properties of amorphous substances; magnetic thin films; magneto-optical recording; sputtered coatings; terbium alloys; 1.4 micron; 20 to 40 V; 30 kHz; 6 MHz; 8×10^-3 mbar; Ar pressure; RF co-sputtering; Tb₂₆Co₇₄; Tb₂₆Fe₇₄; TbFeCo; applied bias voltage; bandwidth; bit size; carrier frequency; carrier-to-noise ratio; dynamic write read tests; magnetic properties; magnetooptical properties; optimum sputtering parameters; polycarbonate disks; structural properties; Amorphous magnetic materials; Amorphous materials; Argon; Chemicals; Iron; Magnetic films; Magnetic properties; Radio frequency; Sputtering; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92243

Filename

92243