Title :
Photocurrent Enhancement of Copper (II) Phthalocyanine on Nanogap Thin Film Electrodes
Author :
Hu, Bing ; Hinds, Bruce J.
Author_Institution :
MicroChip Technol., Chandler, AZ, USA
Abstract :
Photovoltaic efficiency of organic semiconductors can be improved when the electrode separation distance is below the carrier recombination length. Nanogap electrodes formed by Au/Al2O3/Au tunnel junctions were used to study photovoltaic characteristics of Copper (II) phthalocyanine (CuPc) for electrode spacing distance within a 10 nm scale. A large photocurrent enhancement over 50 times that of bulk CuPc film was observed when the electrode gap distance approached 10 nm. CuPc carrier recombination length is seen to be 10 nm, in our evaporation deposited materials, close to its exciton diffusion length in the literature reports. All devices show diode I-V properties due to a large Schotteky barrier contact resistance between the small top Au electrode and CuPc film.
Keywords :
Schottky barriers; contact resistance; copper compounds; electrodes; electron-hole recombination; excitons; organic semiconductors; organometallic compounds; photoconductivity; photoemission; photovoltaic effects; semiconductor thin films; Au electrode; Au-Al2O3-Au; Schotteky barrier contact resistance; bulk copper (II) phthalocyanine film; copper (II) phthalocyanine carrier recombination length; diode I-V properties; electrode gap distance; electrode separation distance; electrode spacing distance; evaporation deposited materials; exciton diffusion length; nanogap thin film electrodes; organic semiconductors; photocurrent enhancement; photovoltaic characteristics; photovoltaic efficiency; tunnel junctions; Aluminum oxide; Contact resistance; Electrodes; Films; Gold; Photoconductivity; Radiative recombination; Nanocontacts; nanofabrication; organic semiconductors; photodetectors; tunneling;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2012.2193595