DocumentCode :
1487391
Title :
Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate
Author :
Serre, S. ; Semikh, S. ; Uznanski, S. ; Autran, J.L. ; Munteanu, D. ; Gasiot, G. ; Roche, P.
Author_Institution :
Aix-Marseille Univ. and CNRS, Institute of Materials, Microelectronics and Nanosciences of Provence (IM2NP, UMR CNRS 6242), Marseille Cedex, France
Volume :
59
Issue :
4
fYear :
2012
Firstpage :
714
Lastpage :
722
Abstract :
This work examines nuclear events resulting from the interaction of atmospheric neutrons at ground level and different atmospheric-like sources with a silicon layer. Using extensive Geant4 simulations and in-depth data analysis, this study provides a detailed comparison between several facilities and natural environment in terms of nuclear processes, secondary ion production and fragment energy distribution. The different computed databases have been used in a second part of this work to estimate the Soft-Error Rate (SER) of a widely characterized 65 nm SRAM test circuit with the Tool suIte for rAdiation Reliability Assessment (TIARA Monte-Carlo simulation code). A detailed analysis is conducted to clarify the mechanisms leading to single and multiple cell upsets and to estimate the SER of a broad spectrum source from values obtained with monoenergetic simulations.
Keywords :
Atmospheric modeling; Databases; Ions; Neutrons; Protons; Random access memory; Silicon; Cosmic-ray induced neutrons; Geant4; SRAM; multiple cell upset; neutron beam testing; single-event upset; soft-error rate; terrestrial neutron spectrum;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2189018
Filename :
6179353
Link To Document :
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