Amorphous wire MI micro sensor using C-MOS IC multivibrator

Author

Kanno, T. ; Mohri, K. ; Yagi, T. ; Uchiyama, T. ; Shen, L.P.

Author_Institution

Dept. of Electr. Eng., Nagoya Univ., Japan

Volume

33

Issue

5

fYear

1997

fDate

9/1/1997 12:00:00 AM

Firstpage

3358

Lastpage

3360

Abstract

A family of sensitive, stable and low power consumption MI micro magnetic sensors are constructed using a CMOS IC multivibrator circuit, in which a sharp pulse train current is applied to an amorphous wire to cause the skin effect. A micro field sensor having a resolution of 10 ^-6 Oe with a full scale (FS) of ±1.5 Oe and a nonlinearity of less than 0.2%, a cut-off frequency of ~200 kHz, and a power consumption in the oscillation circuit of 0.5~5 mW is obtained using a zero-magnetostrictive FeCoSiB amorphous wire of 30 μm diameter and 2 mm length. A differential field sensor is also constructed using a pair of amorphous wires suitable for detection of a localized held with the resolution of 10^-4 Oe cancelling uniform disturbance fields such as terrestrial field. Non-contact sensing of a magnetic card surface field was demonstrated

Keywords

CMOS integrated circuits; amorphous magnetic materials; magnetic sensors; magnetoresistive devices; microsensors; multivibrators; skin effect; 0.5 to 5 mW; 200 kHz; CMOS IC multivibrator circuit; FeCoSiB; amorphous wire MI micro magnetic sensor; differential field sensor; magnetic card surface field; noncontact sensing; pulse train current; skin effect; Amorphous magnetic materials; Amorphous materials; CMOS integrated circuits; Cutoff frequency; Energy consumption; Magnetic circuits; Magnetic sensors; Pulse circuits; Skin effect; Wire;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.617943

Filename

617943