Title :
Quantum cascade laser utilising aluminium-free material system: InGaAs/GaAsSb lattice-matched to InP
Author :
Nobile, Michele ; Klang, P. ; Mujagic, E. ; Detz, H. ; Andrews, A.M. ; Schrenk, W. ; Strasser, G.
Author_Institution :
Center for Micro & Nanostruct., Vienna Univ. of Technol., Vienna, Austria
Abstract :
The demonstration of an aluminium-free quantum cascade laser is reported. The presented quantum cascade laser has been realised in an InGaAs/GaAsSb material system lattice-matched to InP. Laser emission is observed at a wavelength around 11.3 mum. The threshold current density is 1.7 kA/cm2 at 78 K, and a maximum optical output power of 20 mW at the same temperature is reported.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum cascade lasers; InGaAs-GaAsSb; InP; aluminium-free material system; laser emission; lattice-matched system; power 20 mW; quantum cascade laser; temperature 78 K; threshold current density; wavelength 11.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1995
