DocumentCode
148789
Title
A frequency enhanced single package multi-die memory system using an in-package flyby configuration
Author
Zhuowen Sun ; Chen, K. ; Kyongmo Bang
Author_Institution
Invensas Corp., San Jose, CA, USA
fYear
2014
fDate
23-25 April 2014
Firstpage
219
Lastpage
222
Abstract
We presented an advanced, highly integrated multi-die memory module design of flyby connections, using face-down wire bond assembly technology for DDRx and LPDDR3 operations up to 2400 MT/s. Focusing on LPDDR3 memory, we analyzed the performance impact in different C/A bus topologies and package layouts.
Keywords
integrated circuit bonding; integrated circuit packaging; integrated memory circuits; lead bonding; C/A bus topologies; DDRx operations; LPDDR3 memory; LPDDR3 operations; face-down wire bond assembly technology; flyby connections; in-package flyby configuration; multi-die memory module design; package layouts; single package multi-die memory system; Layout; Mobile communication; Quality function deployment; Random access memory; Routing; Sun; Topology; DDR4; DDRx; Flyby; LPDDR3; Soldered-down;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location
Toyama
Print_ISBN
978-4-904090-10-7
Type
conf
DOI
10.1109/ICEP.2014.6826692
Filename
6826692
Link To Document