DocumentCode :
1487949
Title :
Total Dose-induced Charge Buildup In Nitrided-oxide MOS Devices
Author :
Krantz, Richard J. ; Scarpulla, John ; Cable, James S.
Author_Institution :
Research and Engineering Consultants, Inc., Englewood, CO 80111.
Volume :
38
Issue :
6
fYear :
1991
fDate :
12/1/1991 12:00:00 AM
Firstpage :
1746
Lastpage :
1753
Keywords :
Charge measurement; Current measurement; Dielectric measurements; Length measurement; MOS devices; Permittivity measurement; Radiation hardening; Thickness measurement; Time measurement; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1991.574224
Filename :
574224
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1487949
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