Title :
Electrical test method of open defects at data buses in 3D SRAM IC
Author :
Shiraishi, Yasuyuki ; Hashizume, Masaki ; Yotsuyanagi, Hiroyuki ; Tada, Tetsuya ; Shyue-Kung Lu
Author_Institution :
Univ. of Tokushima, Tokushima, Japan
Abstract :
An electrical test method is proposed for detecting an open defect occurring at a data bus of a 3D SRAM IC. Targeted defects are a hard open defect and a soft one in a data bus. The test method is based on supply current of the IC. There is no need to add a circuit for the test method to an original circuit. Feasibility of the tests is examined by some experiments for a circuit made of an SRAM IC on a printed circuit board. The experimental results show us that resistive open defects whose resistance is greater than 300Ω can be detected by the test method.
Keywords :
SRAM chips; integrated circuit testing; system buses; three-dimensional integrated circuits; 3D SRAM IC; data bus; electrical test method; open defect; printed circuit board; resistance; Current measurement; Data buses; Integrated circuit interconnections; Random access memory; Three-dimensional displays; Through-silicon vias; 3D IC; SRAM; data bus; open defect; supply current test;
Conference_Titel :
Electronics Packaging (ICEP), 2014 International Conference on
Conference_Location :
Toyama
Print_ISBN :
978-4-904090-10-7
DOI :
10.1109/ICEP.2014.6826696
