DocumentCode
1488321
Title
VECSEL Optimization Using Microscopic Many-Body Physics
Author
Hader, Jörg ; Wang, Tsuei-Lian ; Yarborough, J. Michael ; Dineen, Colm A. ; Kaneda, Yushi ; Moloney, Jerome V. ; Kunert, Bernardette ; Stolz, Wolfgang ; Koch, Stephan W.
Author_Institution
Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA
Volume
17
Issue
6
fYear
2011
Firstpage
1753
Lastpage
1762
Abstract
Vertical external cavity surface-emitting lasers (VECSELs) are designed and analyzed using an approach based on fully microscopically computed material properties like gain and carrier recombination rates. Very good agreement between theoretical predictions and measured characteristics of the realized devices is demonstrated. The high accuracy of the theoretical models allows one to determine even small deviations between the nominal designs and actual realizations. The models are used to find optimization strategies. It is shown how the external efficiency can be strongly improved using surface coatings that reduce the pump reflection while retaining the gain-enhancing cavity effects at the lasing wavelength. It is shown how incomplete pump absorption can be detrimental to the device performance and how this problem can be reduced using optimized distributed Bragg reflectors and metallization layers. A combination of improved metallization and use of such a coating more than doubles the external efficiency and maximum power for a realized VECSEL operating at 1010 nm and the theory indicates that further significant improvements are possible.
Keywords
antireflection coatings; distributed Bragg reflectors; laser cavity resonators; light absorption; light reflection; metallisation; optical pumping; optimisation; quantum well lasers; surface emitting lasers; VECSEL optimization; carrier recombination; distributed Bragg reflectors; gain recombination; gain-enhancing cavity effects; lasing wavelength; metallization layers; microscopic many-body physics; microscopically computed material properties; pump absorption; pump reflection; surface coatings; vertical external cavity surface-emitting lasers; wavelength 1010 nm; Charge carrier lifetime; Distributed Bragg reflectors; Optical pumping; Photoluminescence; Reflection; Semiconductor lasers; Semiconductor modeling; Charge carrier lifetime; photoluminescence (PL); reflection; semiconductor device modeling; semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2011.2118746
Filename
5742673
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