Title :
High-frequency performance of lateral p-n junction photodiodes
Author :
Tsutsui, Naoaki ; Ryzhii, Victor ; Khmyrova, Irina ; Vaccaro, Pablo O. ; Taniyama, Hideaki ; Aida, Tahito
Author_Institution :
Lab. of Comput. Solid State Phys., Aizu Univ., Japan
fDate :
6/1/2001 12:00:00 AM
Abstract :
We developed an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs). The model takes into account the features of the carrier transport in LJPDs and their geometry, which ensure short transit times and a low capacitance. This model is used for calculating the LJPD´s characteristics as functions of the signal frequency, bias voltage, and structural parameters and for the estimation of the LJPD ultimate performance
Keywords :
capacitance; geometry; p-n junctions; photodiodes; semiconductor device models; semiconductor quantum wells; LJPD ultimate performance; analytical device model; bias voltage; carrier transport; high-frequency performance; lateral p-n junction photodiodes; low capacitance; quantum well lateral p-n junction photodiodes; short transit times; signal frequency; structural parameters; Analytical models; Charge carrier processes; Frequency estimation; Gallium arsenide; P-n junctions; Performance analysis; Photodetectors; Photodiodes; Surface emitting lasers; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
