DocumentCode :
1488846
Title :
Transient response of vertical-cavity surface-emitting lasers of different active-region diameters
Author :
Buccafusca, O. ; Chilla, J.L.A. ; Rocca, J.J. ; Brusenbach, P. ; Martín-Regalado, J.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Volume :
35
Issue :
4
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
608
Lastpage :
615
Abstract :
The multimode dynamics of vertical-cavity surface-emitting lasers with different active-region diameters was measured under subnanosecond electrical excitation (800-ps pulse duration, 100-ps risetime). The dynamics is characterized by the delayed onset of higher order modes which have a turn-on delay that is dependent on the active-region diameter and the excitation parameters. A simple model that can be used to estimate this turn-on delay for large-area devices is presented. Polarization-resolved measurements show that, under this fast excitation condition, both orthogonal polarization states are isomorphic. The influence of the observed dynamics on the relative intensity noise of these devices is also discussed
Keywords :
III-V semiconductors; aluminium compounds; delays; gallium arsenide; high-speed optical techniques; laser modes; quantum well lasers; surface emitting lasers; transient response; 100 ps; 800 ps; AlGaAs-GaAs; AlGaAs-GaAs MQW lasers; VCSEL; active-region diameter; active-region diameters; excitation parameters; fast excitation condition; higher order modes; isomorphic orthogonal polarization states; large-area devices; multimode dynamics; observed dynamics; polarization-resolved measurements; ps pulse duration; ps risetime; relative intensity noise; subnanosecond electrical excitation; transient response; turn-on delay; vertical-cavity surface-emitting lasers; Delay estimation; Electric variables measurement; Laser excitation; Laser modes; Polarization; Pulse measurements; Response surface methodology; Surface emitting lasers; Transient response; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.753666
Filename :
753666
Link To Document :
بازگشت