Title :
Decaborane (B10H14) ion implantation technology for sub-0.1-μm PMOSFET´s
Author :
Goto, Ken-Ichi ; Matsuo, Jiro ; Tada, Yoko ; Sugii, Toshihiro ; Yamada, Isao
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
4/1/1999 12:00:00 AM
Abstract :
A low-energy, high-dosage boron ion implantation technology using a decaborane (B10H14) molecule is developed. Since B10N14 consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and ten times higher effective beam current compared with those of boron. We demonstrated an ultrashallow boron profile with 0.5 keV effective acceleration energy, which does not cause transient enhanced diffusion (TED) after rapid thermal annealing (RTA). Using this technology, we succeeded in fabricating 0.1-μm PMOSFET´s with good device performances and excellent suppression of short-channel effects
Keywords :
MOSFET; boron; doping profiles; elemental semiconductors; ion implantation; rapid thermal annealing; silicon; 0.1 micron; 0.5 keV; PMOSFET; Si:B; decaborane ion implantation technology; effective acceleration energy; effective beam current; rapid thermal annealing; short-channel effects; ultrashallow boron profile; Acceleration; Annealing; Atomic measurements; Boron; CMOS process; Fabrication; Ion implantation; Laboratories; MOS devices; MOSFET circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
