DocumentCode
1489156
Title
An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication
Author
Nii, Hideaki ; Yoshino, Chihiro ; Yoshitomi, Sadayuki ; Inoh, Kazumi ; Furuya, Hiromi ; Nakajima, Hiroomi ; Sugaya, Hiroyuki ; Naruse, Hiroshi ; Katsumata, Yasuhiro ; Iwai, Hiroshi
Author_Institution
Lab. of Microelectron. Eng., Toshiba Corp., Kawasaki, Japan
Volume
46
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
712
Lastpage
721
Abstract
In this paper, a 0.3-μm BiCMOS technology for mixed analog/digital application is presented. A typical emitter area of this technology is 0.3 μm×1.0 μm. This technology includes high f max of 37 GHz at the low collector current of 300 μA and high BVceo of 10 V NPN transistor, CMOS with Leff=0.3 μm, and passive elements. By using the shallow and deep trench isolation technology and nonselective epitaxial intrinsic base, the Cjc can be reduced to 1.6 fF, which is the lowest value reported so far. As a results, we have managed to obtain the high fmax at the low current region and high BV ceo concurrently. These features will contribute to the development of high-performance BiCMOS LSI´s for various mixed analog/digital applications
Keywords
BiCMOS integrated circuits; MMIC; UHF integrated circuits; elemental semiconductors; isolation technology; mixed analogue-digital integrated circuits; silicon; 0.3 micron; 10 V; 300 muA; 37 GHz; RF telecommunication; Si; collector current; emitter area; epitaxial base BiCMOS technology; low current region; mixed analog/digital application; nonselective epitaxial intrinsic base; passive elements; trench isolation technology; BiCMOS integrated circuits; CMOS technology; Epitaxial growth; Germanium silicon alloys; Isolation technology; Parasitic capacitance; Radio frequency; Signal processing; Silicon germanium; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.753705
Filename
753705
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