• DocumentCode
    1489206
  • Title

    Segregated microstructure growth in sputtered Co-Cr films

  • Author

    Maeda, Yasushi ; Takahashi, Masaya

  • Author_Institution
    Basic Res. Lab., NTT, Ibaraki, Japan
  • Volume
    24
  • Issue
    6
  • fYear
    1988
  • fDate
    11/1/1988 12:00:00 AM
  • Firstpage
    3012
  • Lastpage
    3014
  • Abstract
    The growth process of a latent segregated microstructure called the CP (chrysanthemumlike pattern) has been investigated as a function of film thickness in sputtered Co-21.5 at.% Cr films. As film growth proceeds, each crystallite exhibits CP structure development with a periodical stripe pattern. Only crystallites with Cr-rich cores survive. This is related to Cr segregation at the grain boundaries. The CP structure growth process is explained using a model based on (1) a phase separation process restricted by grain boundary and surface diffusion, and (2) grain boundary Cr enrichment at the latter stage of segregation. The correlation between CP structure growth and the change in magnetic properties strongly indicates that the perpendicularly formed CP structure is responsible for the magnetic properties of Co-Cr films
  • Keywords
    chromium alloys; cobalt alloys; coercive force; crystal microstructure; ferromagnetic properties of substances; grain boundaries; magnetic anisotropy; magnetic hysteresis; magnetic recording; magnetic thin films; segregation; sputtered coatings; Cr segregation; chrysanthemumlike pattern; coercive force; crystallites; film growth; film thickness; grain boundaries; hysteresis; latent segregated microstructure; magnetic anisotropy; magnetic properties; periodical stripe pattern; phase separation; sputtered Co-Cr films; surface diffusion; Chromium; Crystal microstructure; Crystallization; Grain boundaries; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; Saturation magnetization; Substrates;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.92318
  • Filename
    92318