DocumentCode :
1489213
Title :
Electric-field penetration into metals: consequences for high-dielectric-constant capacitors
Author :
Black, Charles T. ; Welser, Jeffrey J.
Author_Institution :
Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
46
Issue :
4
fYear :
1999
fDate :
4/1/1999 12:00:00 AM
Firstpage :
776
Lastpage :
780
Abstract :
A consequence of the finite electronic screening length in metals is that electric fields penetrate short distances into the metal surface. Using a simple, semiclassical model of an idealized capacitor, we estimate the capacitance correction due to the distribution of displacement charge in the metal electrodes. We compare our result with experimental data from thin-film high-dielectric-constant capacitors, which are currently leading contenders for use in future high-density memory applications. This intrinsic mechanism contributes to the universally-seen decrease in measured dielectric constant with capacitor film thickness
Keywords :
MIM devices; permittivity; thin film capacitors; capacitance; displacement charge distribution; electric field penetration; electronic screening length; high-density memory; high-dielectric-constant capacitor; metal electrode; metal-dielectric-metal thin-film capacitor; semiclassical model; Capacitance; Dielectric constant; Dielectric materials; Dielectric thin films; Electrodes; Electrons; MIM capacitors; MOS capacitors; Metal-insulator structures; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.753713
Filename :
753713
Link To Document :
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