DocumentCode
1489247
Title
A simple voltage scaling formula for low-power CMOS circuits
Author
Kang, Dae-Gwan ; Park, Young June ; Min, Hong Shick
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume
46
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
803
Lastpage
805
Abstract
A simple formula is proposed for the analysis of the gate delay of CMOS gate under low VDD. The effects of device parameters on gate delay and energy are readily obtained using the formula. Thus, it has the potential for use in the design of device parameters in the low VDD CMOS circuits
Keywords
CMOS integrated circuits; delays; integrated circuit design; network analysis; gate delay; low-power CMOS circuits; voltage scaling formula; Delay effects; Equations; Inverters; Low voltage; MOSFET circuits; Semiconductor device modeling; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.753718
Filename
753718
Link To Document