DocumentCode
1489253
Title
Metal node contact TFT SRAM cell for high-speed, low-voltage applications
Author
Son, K.S. ; Kwon, S.W. ; Lee, Y.J. ; Kim, Dae M.
Author_Institution
Div. of Memory Product & Technol. Dev., Hyundai Electron. Ind. Co. Ltd., Kyungki, South Korea
Volume
46
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
805
Lastpage
806
Abstract
The parasitic diode contact in the bottom gate thin-film transistor (TFT) static random access memory (SRAM) cell limits its high node charging current. The charging of 15 fF load capacitor to 0.1-0.2 V below Vcc takes about 0.65 ms. This adverse effect is circumvented in the metal contact TFT SRAM cell, whose charging to full Vcc is seven times faster
Keywords
MOS memory circuits; SRAM chips; elemental semiconductors; insulated gate field effect transistors; silicon; thin film transistors; 0.1 to 0.2 V; 0.65 ms; 15 fF; Si; TFT SRAM cell; bottom gate thin-film transistor; high node charging current; high-speed; low voltage; metal node contact; Aluminum; Boron; Capacitors; Contacts; Degradation; Diodes; Random access memory; SRAM chips; Thin film transistors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.753719
Filename
753719
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