A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling

Author

Zhou, X. ; Lim, K.Y. ; Lim, D.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

Volume

46

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

807

Lastpage

809

Abstract

A new definition of MOSFET threshold voltage is proposed, namely, the “critical-current at linear-threshold” method, which has a unique solution and is very simple to measure. This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submicron MOS device characterization and modeling. The proposed method effectively removes ambiguity of de facto industry standard of the constant-current method for MOS threshold voltage

Keywords

MOSFET; semiconductor device measurement; semiconductor device models; voltage measurement; MOS threshold voltage; MOSFET; constant-current method; critical-current; deep-submicron MOS device; linear-threshold; modeling; short-channel effects; threshold voltage; Current measurement; Electrical resistance measurement; Immune system; MOS devices; MOSFET circuits; Semiconductor device manufacture; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.753720

Filename

753720