A study of rapid photothermal annealing on the electrical properties and reliability of tantalum pentoxide

Author

Chen, Y. ; Singh, R. ; Rajan, K. ; Dumin, D.J. ; DeBoer, S. ; Thakur, R.P.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA

Volume

46

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

814

Lastpage

816

Abstract

Rapid photothermal annealing is based on the use of vacuum ultraviolet (VUV) photons as the source of optical energy and tungsten halogen lamps as the source of optical and thermal energy. Tantalum pentoxide (Ta₂O₅) thin films deposited by thermal metalorganic chemical vapor deposition (MOCVD) have been annealed by RPP and conventional rapid thermal annealing (RTP). As compared to samples annealed by RTP, lower leakage current and lower trap densities were observed in the samples annealed by RPP

Keywords

MOCVD coatings; dielectric thin films; rapid thermal annealing; tantalum compounds; Ta₂O₅; electrical properties; leakage current; rapid photothermal annealing; reliability; tantalum pentoxide thin film; thermal metalorganic chemical vapor deposition; trap density; tungsten halogen lamp; vacuum ultraviolet irradiation; Chemical vapor deposition; High K dielectric materials; Leakage current; Optical films; Rapid thermal annealing; Rapid thermal processing; Residual stresses; Semiconductor films; Silicon; Thermal stresses;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.753723

Filename

753723