DocumentCode
1489301
Title
An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability
Author
Shin, Hyungsoon ; Lee, Seungjun
Author_Institution
Dept. of Electron Eng., Ewha Women´´s Univ., Seoul, South Korea
Volume
46
Issue
4
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
820
Lastpage
822
Abstract
A new 0.1-μm MOSFET structure called asymmetric halo by large-angle-tilt implant (AHLATI) is proposed for substantial reduction of short-channel and hot-carrier effects while enhancing the current driving capability. This structure differs from the conventional devices in that it has an asymmetric channel profile with a localized pileup region next to the source junction
Keywords
MOSFET; hot carriers; ion implantation; 0.1 micron; AHLATI MOSFET; asymmetric halo by large-angle-tilt implant; current driving; hot carrier effect; reliability; short channel effect; Data analysis; Data mining; Implants; MOSFET circuits; Performance analysis; Semiconductor diodes; Silicon; Solid state circuits; Testing; Velocity measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.753725
Filename
753725
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