DocumentCode :
1489363
Title :
Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines
Author :
Shrivastava, Mayank ; Mehta, Ruchit ; Gupta, Shashank ; Agrawal, Nidhi ; Baghini, Maryam Shojaei ; Sharma, Dinesh Kumar ; Schulz, Thomas ; Arnim, K. ; Molzer, Wolfgang ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution :
Intel Mobile Commun., Hopewell Junction, NY, USA
Volume :
58
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
1597
Lastpage :
1607
Abstract :
In this paper, the impact of process/technology co-optimization on System-on-Chip (SoC) performance using detailed 3-D process/device simulations has been studied for nanoscale FinFET devices. We investigated challenges in FinFET device optimization and scaling while using standard ion implantation process for both overlap and underlap designs. Moreover, an implant-free (IF) complementary metal-oxide-semiconductor process is discussed for better scalability with improved performance. FinFETs designed using this IF process shows a ~2× improvement in static random-access memory and digital input/ output performance. Additionally, a modification to the IF process is proposed, which further helps in achieving an improved logic and analog performance for overall SoC development.
Keywords :
CMOS integrated circuits; CMOS memory circuits; MOSFET; nanotechnology; system-on-chip; 3D process/device simulation; FinFET device optimization; FinFET technology; SoC development; implant-free complementary metal-oxide-semiconductor process; nanoscale FinFET device; optimization guideline; static random-access memory; system-on-chip; FinFETs; Ion implantation; Leakage current; Performance evaluation; Solid modeling; System-on-a-chip; Extremely thin SOI (ETSOI); FinFET; implant-free process; ion implantation and system-on-chip (SoC); process co-optimization; scaling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2123100
Filename :
5742994
Link To Document :
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