High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires

Author

Passi, Vikram ; Bhaskar, Umesh ; Pardoen, Thomas ; Södervall, Ulf ; Nilsson, Bengt ; Petersson, Göran ; Hagberg, Mats ; Raskin, Jean-Pierre

Author_Institution

Inst. of Inf. & Commun. Technol., Electron. & Appl. Math., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

Volume

21

Issue

4

fYear

2012

Firstpage

822

Lastpage

829

Abstract

An on-chip internal stress-based testing device has been developed in order to deform silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The fracture strain and survival probability distribution have been generated for 50-nm-thick and 50- or 500-nm-wide specimens with lengths varying between 2.5 and 10 . Fracture strains reaching up to 5% are attained in the smallest specimens, whereas 90% of the specimens survive 2.5% deformation. This testing platform opens an avenue to investigate and use electromechanical couplings appearing under large mechanical stress or large deformation.

Keywords

deformation; elemental semiconductors; fracture; mechanical testing; nanoelectromechanical devices; nanofabrication; nanoribbons; nanowires; probability; silicon; stress-strain relations; NEMS; Si; electromechanical coupling; fracture strain; high-throughput on-chip large deformation; mechanical stress; nanoelectromechanical system; nanofabrication; nanoribbon; nanowire; on-chip internal stress-based testing device; size 10 mum; size 2.5 mum; size 50 nm; size 500 nm; survival probability distribution; Nanowires; Silicon; Silicon compounds; Strain; Testing; Wires; Fracture strain; Weibull statistics; nanoelectromechanical systems (NEMS); on-chip testing; silicon nanowires (Si NWs); tensile testing;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/JMEMS.2012.2190711

Filename

6179958