A metal-oxide-semiconductor varactor

Author

Svelto, F. ; Erratico, P. ; Manzini, S. ; Castello, R.

Author_Institution

Dipt. di Ingegneria, Univ. di Bergamo, Dalmine, Italy

Volume

20

Issue

4

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

164

Lastpage

166

Abstract

CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance. A prototype metal-oxide-semiconductor (MOS) variable capacitor of 3.1 pF nominal value has been realized in a 0.35-μm standard CMOS process. A factor two capacitance change has been achieved for a 2-V variation of the controlling voltage. The varactor Q ranges from 17 to 35, at 1.8 GHz.

Keywords

CMOS integrated circuits; Q-factor; UHF integrated circuits; circuit tuning; varactors; voltage-controlled oscillators; 0.35 micron; 1.8 GHz; 3.1 pF; CMOS technology scaling; Q factor; capacitance change; controlling voltage; metal-oxide-semiconductor varactor; oxide capacitance; parasitic resistance; quality factor; tuning range; variable capacitors; CMOS technology; Integrated circuit technology; MOS capacitors; Parasitic capacitance; Q factor; Radio frequency; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.753754

Filename

753754