Title :
Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire
Author :
Mathew, Suraj J. ; Niu, Guofu ; Dubbelday, Wadad B. ; Cressler, John D. ; Ott, John A. ; Chu, Jack O. ; Mooney, Patricia M. ; Kavanagh, Karen L. ; Meyerson, Bernard S. ; Lagnado, Isaac
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
We present the dc, ac, and low-frequency noise characteristics of SiGe channel pFETs on silicon-on-sapphire (SOS). The SiGe pFETs show higher mobility, transconductance, and cutoff frequency compared to the Si control devices. A significant reduction in low-frequency (1/f) noise is observed in the SiGe pFETs, and understood to be the result of a lower border trap density sampled at the Fermi-level due to the valence band offset. The linear g/sub m/ of the SiGe pFET´s at 85 K shows a secondary peak which is attributed to the turn-on of the surface channel.
Keywords :
1/f noise; Ge-Si alloys; hole mobility; hole traps; microwave field effect transistors; semiconductor device noise; semiconductor materials; 1/f noise; 85 K; Fermi-level; SiGe; border trap density; cutoff frequency; hole confinement; low-frequency noise; mobility; pFET; silicon-on-sapphire; surface channel; transconductance; turn-on; valence band offset; CMOS process; Circuit noise; Etching; Germanium silicon alloys; Lifting equipment; Low-frequency noise; Microwave devices; Silicon germanium; Substrates; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
