Title :
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
Author :
Henson, W.K. ; Ahmed, K.Z. ; Vogel, E.M. ; Hauser, J.R. ; Wortman, J.J. ; Venables, R.D. ; Xu, M. ; Venables, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
High-frequency capacitance-voltage (C-V) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonstrated. Guidelines are outlined for reliable and accurate estimation of oxide thickness from C-V measurements for oxides down to 1.4 nm.
Keywords :
MOS capacitors; characteristics measurement; insulating thin films; leakage currents; thickness measurement; 1.4 nm; C-V measurements; MOS capacitors; capacitance-voltage measurements; extracted oxide thickness; gate leakage; oxide thickness; series resistance; tunnel oxides; ultrathin oxide; Capacitance measurement; Charge measurement; Circuits; Current measurement; Electrical resistance measurement; Leakage current; MOS capacitors; Oxidation; Rapid thermal processing; Thickness measurement;
Journal_Title :
Electron Device Letters, IEEE
