• DocumentCode
    1489542
  • Title

    Wide-Dynamic-Range CMOS Image Sensors—Comparative Performance Analysis

  • Author

    Spivak, Arthur ; Belenky, Alexander ; Fish, Alexander ; Yadid-Pecht, Orly

  • Author_Institution
    VLSI Syst. Center, Ben-Gurion Univ. of the Negev, Beersheba, Israel
  • Volume
    56
  • Issue
    11
  • fYear
    2009
  • Firstpage
    2446
  • Lastpage
    2461
  • Abstract
    A large variety of solutions for widening the dynamic range (DR) of CMOS image sensors has been proposed throughout the years. We propose a set of criteria upon which an effective comparative analysis of the performance of wide-DR (WDR) sensors can be done. Sensors for WDR are divided into seven categories: 1) companding sensors; 2) multimode sensors; 3) clipping sensors; 4) frequency-based sensors; 5) time-to-saturation (time-to-first spike) sensors; 6) global-control-over-the-integration-time sensors; and 7) autonomous-control-over-the-integration-time sensors. The comparative analysis for each category is based upon the quantitative assessments of the following parameters: signal-to-noise ratio, DR extension, noise floor, minimal transistor count, and sensitivity. These parameters are assessed using consistent assumptions and definitions, which are common to all WDR sensor categories. The advantages and disadvantages of each category in the sense of power consumption and data rate are discussed qualitatively. The influence of technology advancements on the proposed set of criteria is discussed as well.
  • Keywords
    CMOS image sensors; autonomous-control-over-the-integration-time sensors; clipping sensors; companding sensors; frequency-based sensors; global-control-over-the-integration-time sensors; minimal transistor count; multimode sensors; power consumption; time-to-saturation sensors; wide-dynamic-range CMOS image sensors; CMOS image sensors; CMOS technology; Capacitive sensors; Dynamic range; Intelligent sensors; Marine animals; Performance analysis; Pixel; Signal to noise ratio; Space technology; Active pixel sensor (APS); CMOS image sensors (CIS); dynamic range (DR); noise floor (NF); sensitivity; sensors; signal-to-noise ratio (SNR);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2030599
  • Filename
    5272465