DocumentCode :
1489542
Title :
Wide-Dynamic-Range CMOS Image Sensors—Comparative Performance Analysis
Author :
Spivak, Arthur ; Belenky, Alexander ; Fish, Alexander ; Yadid-Pecht, Orly
Author_Institution :
VLSI Syst. Center, Ben-Gurion Univ. of the Negev, Beersheba, Israel
Volume :
56
Issue :
11
fYear :
2009
Firstpage :
2446
Lastpage :
2461
Abstract :
A large variety of solutions for widening the dynamic range (DR) of CMOS image sensors has been proposed throughout the years. We propose a set of criteria upon which an effective comparative analysis of the performance of wide-DR (WDR) sensors can be done. Sensors for WDR are divided into seven categories: 1) companding sensors; 2) multimode sensors; 3) clipping sensors; 4) frequency-based sensors; 5) time-to-saturation (time-to-first spike) sensors; 6) global-control-over-the-integration-time sensors; and 7) autonomous-control-over-the-integration-time sensors. The comparative analysis for each category is based upon the quantitative assessments of the following parameters: signal-to-noise ratio, DR extension, noise floor, minimal transistor count, and sensitivity. These parameters are assessed using consistent assumptions and definitions, which are common to all WDR sensor categories. The advantages and disadvantages of each category in the sense of power consumption and data rate are discussed qualitatively. The influence of technology advancements on the proposed set of criteria is discussed as well.
Keywords :
CMOS image sensors; autonomous-control-over-the-integration-time sensors; clipping sensors; companding sensors; frequency-based sensors; global-control-over-the-integration-time sensors; minimal transistor count; multimode sensors; power consumption; time-to-saturation sensors; wide-dynamic-range CMOS image sensors; CMOS image sensors; CMOS technology; Capacitive sensors; Dynamic range; Intelligent sensors; Marine animals; Performance analysis; Pixel; Signal to noise ratio; Space technology; Active pixel sensor (APS); CMOS image sensors (CIS); dynamic range (DR); noise floor (NF); sensitivity; sensors; signal-to-noise ratio (SNR);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2030599
Filename :
5272465
Link To Document :
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