DocumentCode
1489542
Title
Wide-Dynamic-Range CMOS Image Sensors—Comparative Performance Analysis
Author
Spivak, Arthur ; Belenky, Alexander ; Fish, Alexander ; Yadid-Pecht, Orly
Author_Institution
VLSI Syst. Center, Ben-Gurion Univ. of the Negev, Beersheba, Israel
Volume
56
Issue
11
fYear
2009
Firstpage
2446
Lastpage
2461
Abstract
A large variety of solutions for widening the dynamic range (DR) of CMOS image sensors has been proposed throughout the years. We propose a set of criteria upon which an effective comparative analysis of the performance of wide-DR (WDR) sensors can be done. Sensors for WDR are divided into seven categories: 1) companding sensors; 2) multimode sensors; 3) clipping sensors; 4) frequency-based sensors; 5) time-to-saturation (time-to-first spike) sensors; 6) global-control-over-the-integration-time sensors; and 7) autonomous-control-over-the-integration-time sensors. The comparative analysis for each category is based upon the quantitative assessments of the following parameters: signal-to-noise ratio, DR extension, noise floor, minimal transistor count, and sensitivity. These parameters are assessed using consistent assumptions and definitions, which are common to all WDR sensor categories. The advantages and disadvantages of each category in the sense of power consumption and data rate are discussed qualitatively. The influence of technology advancements on the proposed set of criteria is discussed as well.
Keywords
CMOS image sensors; autonomous-control-over-the-integration-time sensors; clipping sensors; companding sensors; frequency-based sensors; global-control-over-the-integration-time sensors; minimal transistor count; multimode sensors; power consumption; time-to-saturation sensors; wide-dynamic-range CMOS image sensors; CMOS image sensors; CMOS technology; Capacitive sensors; Dynamic range; Intelligent sensors; Marine animals; Performance analysis; Pixel; Signal to noise ratio; Space technology; Active pixel sensor (APS); CMOS image sensors (CIS); dynamic range (DR); noise floor (NF); sensitivity; sensors; signal-to-noise ratio (SNR);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2030599
Filename
5272465
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