DocumentCode :
1489810
Title :
Robust Parameter Extraction for the R3 Nonlinear Resistor Model for Diffused and Poly Resistors
Author :
McAndrew, Colin C. ; Bettinger, Tamara
Author_Institution :
Freescale Semiconductor, Inc., Tempe, AZ, USA
Volume :
25
Issue :
4
fYear :
2012
Firstpage :
555
Lastpage :
563
Abstract :
This paper presents robust algorithms to determine the parameters of the R3 nonlinear resistor model for both diffused and poly resistors. Extraction of many R3 parameters is simplified if it is based on the zero-bias conductance G_{0} , because G_{0} is not affected by velocity saturation or self-heating. We present techniques to reliably determine G_{0} , even when measured data are noisy or highly nonlinear, and show how to extract basic resistance parameters, temperature coefficients, and depletion pinching parameters using G_{0} . We describe how to determine thermal conductance parameters, and present a final parameter optimization strategy that prevents imprecision in modeling G_{0} from compromising the accuracy of fitting resistor nonlinearity.
Keywords :
Parameter extraction; Reliability; Resistors; SPICE; Semiconductor device modeling; Resistors; SPICE; semiconductor device modeling;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2012.2194170
Filename :
6180012
Link To Document :
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